注入剂量对离子注入法制备Al-N共掺杂P型ZnO的影响

摘要

采用射频磁控共溅射的方法制备出ZnO∶Al薄膜,以NO和O2为源气体(O2/O2+NO=75%)、等离子体浸没离子注入(PⅢ)方法在不同的工艺条件下得到了不同N+注入剂量的ZnO∶Al∶N薄膜,并在N2氛围下对样品进行了850℃退火处理.通过XRD图谱、霍尔效应(Hall)测试结果、光致发光光谱(PL)、紫外-可见光透射光谱等对样品的结构和性能进行了分析,着重研究了N+注入剂量对ZnO∶Al∶N薄膜性质的影响.结果表明,注入剂量控制在1015cm-2量级时,N可以通过占据O空位和替换O原子形成No并与Al和Zn成键,对于ZnO薄膜实现p型反转是很关键的.实现p型反转的ZnO∶Al∶N薄膜载流子浓度可达2.16×1016cm-3,电阻率为8.90Ω·cm,霍耳迁移率为32.4cm2/V·s.%ZnO: Al films were prepared by using a radio-frequency (RF) magnetron co-sputtering system, and then ZnO: Al ∶ N films were synthesized by using the plasma immersion ion implantation (PⅢ) method with NO and O2 assource gases (O2/(O2 +NO)=75％) and annealed in N2 at 850℃. The structure, electrical and optical properties of the ZnO: Al: N films were studied with the help of X-ray Diffractometer (XRD), Hall effect test system, Photoluminescence (PL) spectrometer and UV-visible spectrometer. The results indicate that when the implantation dose was about 1015 cm-2 the N atoms exist in the films as acceptors and form N-Al and N-Zn bonds by occupying the O vacancies (Vo) and substituting O atoms and implantation dose of 1015cm-2 order is a pivotal parameter to achieve p-type ZnO ∶ Al∶ N films. The carrier concentration, Hall mobility and resistivity of the p-type ZnO: Al: N films are 2. 16× 1016 cm-3, 32.4 cm2/V · s and 8.90 Ω · cm, respectively. The effect of the N+ implantation dose on the structure, electrical and optical properties of ZnO: Al: N films were studied.