Homoepitaxial single crystal diamond grown on natural diamond seeds (type Ha) with boron-implanted layer demonstrating the highest mobility of 1150 cm~2/V s at 300 K for ion-implanted diamond

摘要

The homoepitaxial single crystal diamond growth by microwave plasma assisted CVD at high microwave power density 200 W/cm~3 in a 2.45 GHz MPACVD reactor using natural diamond seeds (type Ila) was investigated. The semiconductor CVD diamond of p-type was obtained by doping technique of ion implantation. Boron ions were implanted at the acceleration energy of 80 keV with two cases of dose: 5 ? 10~(14) and 3 ? 10~(15)cm~(-2). To recover the damage layer and activate dopants in CVD diamond the rapid annealing at nitrogen atmosphere at 1380° C was used. B-implanted diamond layer showing the mobility of 1150 cm~2/V s at 300 K which is the highest for ion-implanted diamond was obtained.