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机译:通过金属-绝缘体-半导体-异质结构电容器的C(V)表征研究氮化硅钝化层与AlGaN / AIN / GaN异质结构之间的界面
Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Goteborg, Sweden;
Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Goteborg, Sweden;
Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Goteborg, Sweden Science Institute, University of Iceland, 107 Reykjavik, Iceland;
Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Goteborg, Sweden;
Department of Physics, Chemistry and Biology, Linkoping University, SE-58183 Linkoping, Sweden;
Department of Physics, Chemistry and Biology, Linkoping University, SE-58183 Linkoping, Sweden;
Department of Physics, Chemistry and Biology, Linkoping University, SE-58183 Linkoping, Sweden;
Department of Physics, Chemistry and Biology, Linkoping University, SE-58183 Linkoping, Sweden;
机译:等离子体增强原子层沉积AIN钝化对AlGaN / GaN异质结构中二维电子气输运行为的影响
机译:AlGaN / GaN异质结构的PECVD氮化硅钝化
机译:氮化硅钝化的AlGaN / GaN异质结构的DLTS表征
机译:氮化硅钝化AlGaN / GaN异质结构以用于绝缘栅晶体管
机译:在AlGaN / GaN高电子迁移率晶体管上进行等离子增强化学气相沉积的氮化硅钝化的热稳定性。
机译:自对准栅AlGaN / GaN异质结构场效应晶体管的氮化钛的合成
机译:通过金属-绝缘体-半导体-异质结构电容器的C(V)表征研究氮化硅钝化和AlGaN / AlN / GaN异质结构之间的界面