机译:InGaN亚量子阱对InAlN / GaN / InAlN共振隧穿二极管性能的影响
State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;
State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;
State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;
机译:InGaN亚量子阱对InAlN / GaN / InAlN共振隧穿二极管性能的影响
机译:InAlN底层对在近紫外InGaN / GaN单量子阱发光二极管中检测到的深陷阱的影响
机译:无应变GaN / Inaln啁啾短周期超晶格电子阻挡层,用于450nm Ingan激光二极管
机译:电子隧道屏障对InGaN-GaN紫外发光二极管性能的影响
机译:用于AlGaN / GaN和InAlN / GaN二极管以及在硅(111)衬底上生长的高迁移率晶体管的CMOS兼容氧化钌肖特基接触的研究。
机译:从硅衬底上分离出来的独立式GaN上的InGaN / GaN蓝色发光二极管的正向隧穿特性研究
机译:Inaln底层对近UV Ingan / GaN单量子孔发光二极管检测到深陷阱的影响
机译:用于干蚀刻GaN,alN,InGaN和InalN的等离子体化学物质