首页> 外文OA文献 >Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes

【2h】

Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes

机译：Inaln底层对近UV Ingan / GaN单量子孔发光二极管检测到深陷阱的影响

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
A. Y. Polyakov; C. Haller; N. B. Smirnov; A. S. Shiko; I. V. Shchemerov; S. V. Chernykh; L. A. Alexanyan; P. B. Lagov; Yu. S. Pavlov; J.-F. Carlin; M. Mosca; R. Butté; N. Grandjean; S. J. Pearton;
展开▼
作者单位

展开▼
年度 2019
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes [J] . Polyakov A. Y., Haller C., Smirnov N. B., Journal of Applied Physics . 2019,第12期

机译：InAlN底层对在近紫外InGaN / GaN单量子阱发光二极管中检测到的深陷阱的影响
2. Observation of minority-carrier traps in InGaN/GaN multiple-quantum-well light-emitting diodes during deep-level transient spectroscopy measurements [J] . Jae Wook Kim, G. Hugh Song, Jhang W. Lee Applied Physics Letters . 2006,第18期

机译：InGaN / GaN多量子阱发光二极管中少数载流子陷阱的深层瞬态光谱测量过程中的观察
3. High-efficiency near-UV light-emitting diodes on Si substrates with InGaN/GaN/AlGaN/GaN multiple quantum wells [J] . Li Yuan, Xing Zhiheng, Zheng Yulin, Journal of Materials Chemistry, C. materials for optical and electronic devices . 2020,第3期

机译：使用IngaN / GaN / AlGan / GaN多量子孔的Si基材上的高效近UV发光二极管
4. Simulation of InGaN/GaN multiple quantum well light-emitting diodes with Quantum Dot electrical and optical effects [C] . C. S. Xia, W. Lu, Z. M. Simon Li, International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices . 2006

机译：用量子点电和光学效应模拟IngaN / GaN多量子阱发光二极管
5. InGaN/GaN Multiple Quantum Well Light-Emitting Diodes grown on Polar, Semi-polar and Non-Polar Orientations. [D] . Mukund, Aadhithya Hosalli. 2014

机译：以极性，半极性和非极性方向生长的InGaN / GaN多量子阱发光二极管。
6. Optoelectronic Performance Variations in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes: Effects of Potential Fluctuation [O] . Abu Bashar Mohammad Hamidul Islam, Jong-In Shim, Dong-Soo Shin 2018

机译：InGaN / GaN多量子阱发光二极管中的光电性能变化：电位波动的影响
7. Investigation of radiative tunneling in GaN/InGaN single quantum well light-emitting diodes [O] . X.A Cao, S.F LeBoeuf, K.H Kim, 2002

机译：GaN / Ingan单量子孔发光二极管辐射隧穿的研究
8. MBE Growth and Properties of GaN, InGaN and GaN/InGaN Quantum Well Structures for Laser Diode Applications [R] . Schetzina, J. F. 2001

机译：用于激光二极管应用的GaN，InGaN和GaN / InGaN量子阱结构的mBE生长和性质

Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes

著录项

引文网络

相似文献

相关主题

期刊订阅