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Analysis of current-voltage characteristics of Au/pentacene/fluorine polymer/indium zinc oxide diodes by electric-field-induced optical second-harmonic generation

机译:电场诱导的光二次谐波产生分析金/并五苯/氟聚合物/铟锌氧化物二极管的电流-电压特性

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摘要

By using electric-field-induced optical second-harmonic generation measurement coupled with the conventional current-voltage (I-V) measurement, we studied the carrier transport of organic double-layer diodes with a Au/pentacene/fluorine polymer (FP)/indium zinc oxide (IZO) structure. The rectifying I-V characteristics were converted into the I-E characteristics of the FP and penta-cene layers. Results suggest a model in which Schottky-type electron injection from the IZO electrode to the FP layer governs the forward electrical conduction (V > 0), where the space charge electric field produced in the FP layer by accumulated holes at the pentacene/FP interface makes a significant contribution. On the other hand, Schottky-type injection by accumulated interface electrons from the pentacene layer to the FP layer governs the backward electrical conduction (V < 0). The electroluminescence generated from the pentacene layer in the region V>0 verifies the electron transport across the FP layer, and supports the above suggested model.
机译:通过使用电场感应的光学二次谐波生成测量与常规电流-电压(IV)测量相结合,我们研究了具有Au /并五苯/氟聚合物(FP)/铟锌的有机双层二极管的载流子传输氧化物(IZO)结构。整流后的I-V特性转换为FP和五并烯层的I-E特性。结果提出了一个模型,其中从IZO电极到FP层的肖特基型电子注入决定了正向导电(V> 0),其中在并五苯/ FP界面处的空穴积累在FP层中产生的空间电荷电场做出了巨大的贡献。另一方面,通过从并五苯层到FP层的累积界面电子的肖特基型注入控制反向导电(V <0)。在V> 0区域中并五苯层产生的电致发光验证了穿过FP层的电子传输,并支持上述建议的模型。

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  • 来源
    《Journal of Applied Physics》 |2015年第24期|245502.1-245502.6|共6页
  • 作者单位

    Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S3-33, O-okayama, Meguro-ku, Tokyo 152-8552, Japan;

    Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S3-33, O-okayama, Meguro-ku, Tokyo 152-8552, Japan;

    Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S3-33, O-okayama, Meguro-ku, Tokyo 152-8552, Japan;

    Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S3-33, O-okayama, Meguro-ku, Tokyo 152-8552, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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