Analysis of interfacial energy states in Au/pentacene/polyimide/indium-zinc-oxide diodes by electroluminescence spectroscopy and electric-field-induced optical second-harmonic generation measurement

摘要

By using electroluminescence (EL) spectroscopy and electric-field-induced optical second-harmonic generation (EFISHG) measurement, we analyzed interfacial energy states in Au/pentacene/polyimide/indium-zinc-oxide (IZO) diodes, to characterize the pentacene/polyimide interface. Under positive voltage application to the Au electrode with reference to the IZO electrode, the EFISHG showed that holes are injected from Au electrode, and accumulate at the pentacene/polyimide interface with the surface charge density of Q(s) = 3.8 x 10(-7) C/cm(2). The EL spectra suggested that the accumulated holes are not merely located in the pentacene but they are transferred to the interface states of polyimide. These accumulated holes distribute with the interface state density greater than 10(12)cm(-2) eV(-1) in the range E = 1.5-1.8 and 1.7-2.4 eV in pentacene and in polyimide, respectively, under assumption that accumulated holes govern recombination radiation. The EL-EFISHG measurement is helpful to characterize organic-organic layer interfaces in organic devices and provides a way to analyze interface energy states. (C) 2016 The Japan Society of Applied Physics