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Fabrication of hydrophobic/hydrophilic HMDSO films by atmospheric pressure plasma jet deposition

机译:大气压等离子体喷射沉积制备疏水/亲水HMDSO薄膜

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Silicon-oxide thin films were deposited by atmospheric pressure plasma jet (APPJ) using hexamethyl disiloxane (HMDSO) as a precursor. The properties of the deposited films were characterized by using field emission scanning electron microscope (FE-SEM), attenuated total reflectance-Fourier transform infrared spectrometer (ATR FTIR), water contact angle (WCA) measurements, and electron spectroscopy for chemical analysis (ESCA). The results revealed that the film thickness increased as a function of the applied power. At the same time, the surface morphology varied correspondingly which correlated closely to the surface wettability of the deposited thin films. At the applied powers of 50 W and 100 W, the morphology of the aggregated particles possessed a WCA of similar to 140 degrees and similar to 110 degrees, respectively. On the other hand, the superhydrophilic (WCA 10 degrees) surface of the deposited film was obtained by applying 140 W. The investigation demonstrated that the morphological change of deposited HMDSO films might play the most important role on surface wettability comparing with the chemical composition, which implies the deposited thin films possess great potential for the applications as the barrier layers for releasing applications. (C) 2018 The Japan Society of Applied Physics
机译:使用六甲基二硅氧烷(HMDSO)作为前体,通过大气压等离子体射流(APPJ)沉积氧化硅薄膜。通过使用场发射扫描电子显微镜(FE-SEM),衰减全反射-傅立叶变换红外光谱仪(ATR FTIR),水接触角(WCA)测量和化学分析电子光谱(ESCA)来表征沉积膜的性能)。结果表明,膜厚度随施加功率的增加而增加。同时,表面形态相应地变化,这与所沉积的薄膜的表面润湿性紧密相关。在50 W和100 W的施加功率下,聚集颗粒的形貌分别具有近似140度和110度的WCA。另一方面,通过施加140 W可以得到沉积膜的超亲水表面(WCA <10度)。研究表明,与化学成分相比,沉积HMDSO膜的形态变化可能对表面润湿性起着最重要的作用。 ,这意味着沉积的薄膜作为释放应用的阻挡层具有很大的应用潜力。 (C)2018日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2019年第sa期|SAAC01.1-SAAC01.5|共5页
  • 作者

    Lin Yu-Chun; Wang Meng-Jiy;

  • 作者单位

    Natl Taiwan Univ Sci & Technol, Dept Chem Engn, 43 Keelung Rd,Sec 4, Taipei 106, Taiwan;

    Natl Taiwan Univ Sci & Technol, Dept Chem Engn, 43 Keelung Rd,Sec 4, Taipei 106, Taiwan;

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