Temperature Dependence of Shallow-Trench-Isolation Mechanical Stress on n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors

摘要

The impact of shallow-trench-isolation (STI) induced mechanical stress on a device's performance has been studied in many research works. However, there has been a lack of study concerning its temperature dependence. This paper deals with the influence of temperature on the drive current degradation in modern n-channel metal-oxide-semiconductor field-effect transistors (n-MOSFETs) that is caused by STI-induced mechanical stress. The results show that as the operating temperature increases, the drive current degradation induced by STI mechanical stress is slightly reduced. A simple equation is presented for the purpose of quantitative analysis.