Impact of Dynamic Stress on Reliability of Nanoscale n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with SiON Gate Dielectric Operating in a Complementary Metal-Oxide-Semiconductor Inverter at Elevated Temperature

摘要

This paper investigates the impact of dynamic stress on the reliability of a nanoscale n-channel metal-oxide-semiconductor field effect transistor (nMOSFET) with a SiON gate dielectric operating in a complementary metal-oxide-semiconductor (CMOS) inverter at an elevated temperature T. Experimental results indicate that the shift of threshold voltage V_(th) by dynamic stress is much larger than that by various static stresses in short channel nMOSFETs. Under a dynamic stress, the OFF-state stress generated interface traps and unfilled electron traps because of the OFF-state hot carrier effect due to drain induced barrier lowering (DIBL) at high T. Although the subsequent ON-state did not produce any new defects, it filled the electron traps, which increased the V_(th) abruptly. Consecutive application of OFF-and ON-state stresses caused a buildup of recoverable and permanent electron traps, and interface traps, thereby resulting in the significant increase in V_(th), In addition, the dynamic stress degradation was frequency-independent up to 500 kHz and its impact on nMOSFET lifetime depends strongly on gate lengths. These results indicate that OFF-state induced defects are the main cause for dynamic stress degradation and can impose a significant limitation on CMOS device scaling.