Method for producing a substrate, substrate, metal-oxide-semiconductor field-effect transistor with a substrate, micro-electromechanical system with a substrate, and motor vehicle

摘要

A method for producing a substrate for a metal-oxide-semiconductor field-effect transistor or a micro-electromechanical system includes dry etching a preliminary trench into the substrate by using a structured first masking layer. The substrate includes a silicon carbide layer, and the dry etching is carried out in such a way that a remnant of the first structured masking layer remains. The method further includes applying a second masking layer at least to walls of the preliminary trench and dry etching by using the remnant of the first masking layer and the second masking layer so as to produce a trench with a step in the trench.