首页> 外国专利> Metal-oxide-semiconductor field-effect transistor's electronic power chip soldering method for electric conductor forming support, involves maintaining temperature of thermode to be lower than temperature of another thermode

Metal-oxide-semiconductor field-effect transistor's electronic power chip soldering method for electric conductor forming support, involves maintaining temperature of thermode to be lower than temperature of another thermode

机译:用于形成导体的金属氧化物半导体场效应晶体管的电子功率芯片焊接方法,涉及保持一个热电极的温度低于另一个热电极的温度。

摘要

The method involves contacting a thermode (1) with an electronic chip (4), where temperature (T1) of the thermode is lower than the temperature (T2) of another thermode (2). The electronic chip is maintained in a cavity (10) of the former thermode by a vacuum effect created in the cavity. A support element (3) is mounted at an end of the soldering of the electronic chip. The electronic chip is cooled by using the fluid i.e. low pressure air, at low temperature. An independent claim is also included for a device for soldering an electronic chip.
机译:该方法包括使热电极(1)与电子芯片(4)接触,其中热电极的温度(T1)低于另一个热电极(2)的温度(T2)。通过在空腔中产生的真空效应,将电子芯片保持在前一个热电极的空腔(10)中。支撑元件(3)安装在电子芯片的焊接的末端。通过使用流体,即低压空气,在低温下冷却电子芯片。还包括用于焊接电子芯片的设备的独立权利要求。

著录项

  • 公开/公告号FR2938724A1

    专利类型

  • 公开/公告日2010-05-21

    原文格式PDF

  • 申请/专利权人 VALEO EQUIPEMENTS ELECTRIQUES MOTEUR;

    申请/专利号FR20080057861

  • 发明设计人 LENOIR ROMARIC;

    申请日2008-11-19

  • 分类号H05K3/34;

  • 国家 FR

  • 入库时间 2022-08-21 18:26:43

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