Concise Analytical Threshold Voltage Model for Cylindrical Fully Depleted Surrounding-Gate Metal-Oxide-Semiconductor Field Effect Transistors

摘要

On a basis of a quasi-2D potential analysis using the effective conducting path effect (ECPE), a concise analytical model for the threshold voltage in cylindrical fully depleted surrounding-gate (SG) metal-oxide-semiconductor field effect transistors (MOSFETs) is derived. With various depths of the effective conducting path, the minimum channel potential Φ_(d_(eff),min) induced by ECPE is used to develop the threshold voltage model. Besides the increased depth of the effective conducting path, a thin silicon body and a decreased oxide thickness can reduce threshold voltage roll-off simultaneously. It is also observed that the threshold voltage shift depends on the scaling factor. A large scaling factor is preferred to alleviate threshold voltage degradation. This paper not only provides a simple analytical model but also offers an efficient analysis of the threshold voltage of the short-channel cylindrical fully depleted SG MOSFETs.