Fabrication and Characteristics of Sputter-Induced Carbon Nanoneedle Field Emitters and Si Electron-Transparent Films for Application to Electron-Beam-Pumped Light Sources

摘要

We have fabricated novel sputter-induced carbon nanoneedle field emitters and Si electron-transparent films for application to electron-beam-pumped light sources. The sputter-induced carbon nanoneedle field emitters exhibited a stable electron emission of 0.1mA at an average field of 13V/μm. The 1.5-μm-thick Si electron-transparent films achieved an electron transmittance of about 60% at an acceleration voltage of 27 kV. We also demonstrated an electron-beam-pumped light source realized by the excitation of N_2 gas, and clearly observed an N_2 gas spectrum with a peak at 337 nm.