Dielectric Breakdown and Charge Trapping of Ultrathin ZrHfO/SiON High-k Gate Stacks

摘要

One- and two-step breakdown phenomena were observed on the zirconium-doped hafnium oxide (ZrHfO) high-k dielectric films with equivalent oxide thicknesses 1.8 and 2.5 nm, respectively. The difference in the breakdown sequence was attributed to the bulk hi