机译:氧离子注入隔离AlGaN / GaN高电子迁移率晶体管的电特性和透射电镜评估
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.;
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.;
Department of Engineering and System Science, National Tsing Hua University, Hsinchu 300, Taiwan, R.O.C.;
Institute of Materials Engineering, National Taiwan Ocean University, Keelung 202-24, Taiwan, R.O.C.;
Microwave Electronics Laboratory, Microtechnology and Nanoscience Chalmers University of Technology, SE 412 96 Gothenburg, Sweden;
Microwave Electronics Laboratory, Microtechnology and Nanoscience Chalmers University of Technology, SE 412 96 Gothenburg, Sweden;
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.;
机译:电应力AlGaN / GaN高电子迁移率晶体管器件的透射电子显微镜表征
机译:AlGaN / GaN高电子迁移率晶体管结构中二维电子气的全面磁输运特性,可评估界面粗糙度
机译:使用I-V脉冲表征和红外线显微镜的AlGaN / GaN高电子迁移晶体管的热分析
机译:新的离子与log(Ig)图的开发,以表征耗尽模式高电子迁移率晶体管,随着将非常薄的蒸发的Al层插入AlGaN / GaN高电子迁移率晶体管作为示例
机译:电和热感应物理缺陷对AlGaN / GaN高电子迁移率晶体管的可靠性的影响。
机译:AlGaN / GaN高电子迁移率晶体管中的电流崩塌是否可能源于沟道电子的能量弛豫?
机译:alGaN / GaN高电子迁移率晶体管结构中二维电子气的综合磁传输特性,可以评估界面粗糙度