Post-thermal Annealing Effects on Photoluminescence Properties of InAs Quantum Dots on GaNAs Buffer Layer

摘要

The thermal annealing characteristics of InAs quantum dots (QDs) on a GaNAs buffer layer grown by the metalorganic chemical vapor deposition were investigated. Although the photoluminescence efficiency was deteriorated by annealing, the improved tolerance in the annealing time and temperature was confirmed in comparison with the GaAs buffer sample. The wavelength blue shift was similar in both buffer layers. The improvements in the PL efficiency were considered to be related to the decreased coalescent QDs upon introducing the dilute-nitrogen into the buffer layer.