Photoluminescence Characterization of InAs Quantum Dots on GaNAs Buffer Layer by Metalorganic Chemical Vapor Deposition

摘要

The photoluminescence (PL) characteristics of InAs quantum dots on a GaNAs buffer layer grown by metalorganic chemical vapor deposition were investigated. A maximum 60 nm redshift was observed for a nitrogen composition of less than 3% in the buffer layer with an increase in emission efficiency in comparison with a conventional GaAs buffer layer. A large intensity increase with a blueshift of PL was observed for a buffer layer of 3% nitrogen composition. These were due to a change in the dot morphology on the GaNAs buffer layer. The InAs supply and growth temperature dependences of PL properties were also examined in detail.