首页> 外文期刊>Japanese journal of applied physics >Photoluminescence Characteristics of InAs Quantum Dots with GalnP Cover Layer Grown by Metalorganic Chemical Vapor Deposition
【24h】

Photoluminescence Characteristics of InAs Quantum Dots with GalnP Cover Layer Grown by Metalorganic Chemical Vapor Deposition

机译:金属有机化学气相沉积生长具有GalnP盖层的InAs量子点的光致发光特性

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

The photoluminescence (PL) characteristics of InAs quantum dots (QDs) with a GalnP cover layer grown by metalorganic chemical vapor deposition were investigated to clarify the effect of the cover layer. By comparing the PL peak wavelength between the GalnP and GalnAs covered structures, the strain of the cover layer was identified as the main mechanism responsible for the emission wavelength shift of the InAs QDs. The PL emission efficiency and the thermal annealing effect of the GalnP-covered structure were also investigated.
机译:研究了具有通过有机金属化学气相沉积法生长的GalnP覆盖层的InAs量子点(QD)的光致发光(PL)特性,以阐明覆盖层的作用。通过比较GalnP和GalnAs覆盖结构之间的PL峰值波长,可以确定覆盖层的应变是导致InAs QD发射波长偏移的主要机理。还研究了覆盖有GalnP的结构的PL发射效率和热退火效果。

著录项

  • 来源
    《Japanese journal of applied physics》 |2009年第7issue1期|070203.1-070203.3|共3页
  • 作者单位

    Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan;

    Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan;

    Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan;

    Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan;

    Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan;

    Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号