机译:金属有机化学气相沉积生长具有GalnP盖层的InAs量子点的光致发光特性
Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan;
Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan;
Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan;
Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan;
Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan;
Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan;
机译:低压金属有机化学气相沉积法产生的高度均匀的自组装InAs / GaAs量子点产生的窄光致发光线宽(<17 meV)
机译:金属有机化学气相沉积法生长的InAs / GaAs自组装量子点激光器-生长后退火对堆叠的InAs量子点的影响
机译:金属有机化学气相沉积法在GaNAs缓冲层上InAs量子点的光致发光特性
机译:从InAS量子点激起到〜1.3驴M,通过金属有机化学气相沉积种植的Gainnas嵌入层
机译:铝砷化镓-砷化镓-砷化镓-砷化铟量子点通过低压金属有机化学气相沉积与量子阱异质结构激光器耦合。
机译:Inn量子点和纳米结构的金属化学化学气相沉积
机译:单个Inas量子点的激子发射电荷为1.3美元/μ美元 通过金属有机化学气相沉积生长
机译:通过金属有机化学气相沉积在Gaassubstrates上生长的Inas(0.3)sb(0.7)层中载流子传输的详细分析