METHOD FOR DELTA-DOPING IN GALLIUM ARSENIDE EPITAXIAL LAYER GROWN ON SILICON SUBSTRATE BY METALORGANIC CHEMICAL VAPOR DEPOSITION

摘要

PURPOSE: To form a satisfactory GaAs delta-doping layer on an Si substrate while using metalorganic chemical vapor deposition (MOCVD). ;CONSTITUTION: When forming GaAs delta-doping on the Si substrate while utilizing MOCVD, a buffer layer exceeding 3 μm thickness is formed on the Si substrate and afterwards, the GaAs delta-doping layer is formed at a growing temperature of 700 to 750°C. Thus, the thermal dispersion of a dopant caused by a lot of transitions generated on a GaAs/Si interface can be prevented from being accelerated and an effect improving the characteristics of the GaAs delta- doping layer is generated.;COPYRIGHT: (C)1993,JPO