Thermal annealing effects on photoluminescence properties of vertically stacked InAs/GaAs quantum dots with optimized spacer layer thickness

摘要

Vertically stacked self-assembled InAs/GaAs quantum dots (QDs) structures with different GaAs spacer layer thicknesses are investigated by photoluminescence spectroscopy (PL). For correlated structures, the PL full widths at half maximum (FWHM) is found to go throw a minimum and the PL intensity throw a maximum for a spacer layer thickness around 8.5 nm. The effect of post growth rapid thermal annealing (RTA) on the PL properties of the optimized structure is discussed.