量子点层厚度对量子点发光二极管发光特性的影响

摘要

采用湿法旋涂技术制备量子点发光二极管器件（QD-LEDs）。PEDOT作为空穴注入层，TFB作为空穴传输层，量子点作为发光层，采用无机二氧化钛（TiO2）作为电子传输层，在相同的工艺条件下调节量子点层旋涂转速（800～1100 r/min），制备不同厚度的量子点发光二极管发光器件（QD-LEDs）。实验结果表明，当量子点层的旋涂转速为900 r/min时，此时的量子点层厚度为30 nm，所制备的量子点发光二极管器件（QD-LEDs）的发光性能最好，开启电压最低，只有5．5 V。%Quantum dot light emitting diode devices (QD-LEDs)havebeen developedwith wet spin coating technique.In the QDLEDs,PEDOT is used as hole injection layer,TFB as electron transport layer,quantum dots as emissive layer,and inorganic titanium dioxide (TiO2 )as a hole transport layer.In the same processing conditions,thequantum dot layer spin speed wasadjusted-from 800 to 1 100 r/min,and quantum dot light emitting diode devices (QD-LEDs)prepared with different thicknesses.Experi-ment results show that,when the spin-coating speed of quantum dot layer is 900 r/min and quantum dot layer thickness is 30 nm,the QD-LED performance is best with a lowturn-on voltage of 5.5V.