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Post-Annealing Effects on Emission Characteristics of InAs Quantum Dots on GaNAs Buffer Layer

机译：退火后对GaNAs缓冲层上InAs量子点发射特性的影响

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Thermal annealing effects on PL characteristics of MOCVD grown InAs QD on GaNAs buffer layers were investigated. By using GaNAs buffer, the suppression of PL intensity degradation due to the crystalline improvement of GaNAs was observed.

机译：研究了热退火对GaNAs缓冲层上MOCVD生长的InAs QD的PL特性的影响。通过使用GaNAs缓冲液，抑制了由于GaNAs的结晶改善而导致的PL强度降低的抑制。

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《》|2007年|307-310|共4页
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Suzuki; R.; Miyamoto; T.; Koyama; F.;
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入库时间 2022-08-26 15:08:16

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专利

1. Wavelength elongation and improved emission efficiency of MOCVD-grown InAs quantum dots by GaNAs buffer layer [J] . R. Suzuki, T. Miyamoto, F. Koyama Journal of Crystal Growth . 2007,第Jan期

机译：GaNAs缓冲层的MOCVD生长的InAs量子点的波长延长和提高的发射效率
2. Post-thermal Annealing Effects on Photoluminescence Properties of InAs Quantum Dots on GaNAs Buffer Layer [J] . Tomoyuki Miyamoto, Ryoichiro Suzuki Japanese journal of applied physics . 2011,第3ISSUE1期

机译：热退火对GaNAs缓冲层上InAs量子点光致发光特性的影响
3. High-density Inas Quantum Dots On Ganas Buffer Layer [J] . R. Suzuki, T. Miyamoto, T. Sengoku, Journal of Crystal Growth . 2008,第23期

机译：Ganas缓冲层上的高密度Inas量子点
4. Post-Annealing Effects on Emission Characteristics of InAs Quantum Dots on GaNAs Buffer Layer [C] . Suzuki R., Miyamoto T., Koyama F. International Conference on Indium Phosphide and Related Materials . 2007

机译：在GANAS缓冲层上INAS量子点排放特性的后退火效应
5. Exploring Single Hole States in InAs/GaAs Quantum Dots and Quantum Dot Molecules under 2-D Electric Fields [D] . Ma, Xiangyu. 2018

机译：在2-D电场下探索InAs / GaAs量子点和量子点分子中的单孔状态
6. Telecommunication Wavelength-Band Single-Photon Emission from Single Large InAs Quantum Dots Nucleated on Low-Density Seed Quantum Dots [O] . Ze-Sheng Chen, Ben Ma, Xiang-Jun Shang, 2016

机译：低密度种子量子点上成核的单个InAs量子点的电信波带单光子发射
7. Anisotropic Lattice Deformation of InAs Self-Assembled Quantum Dots Embedded in GaNAs Strain Compensating Layers [O] . Matsumura, N, Muto, S, Ganapathy, S, 2006

机译：嵌入GaNAs应变补偿层中的InAs自组装量子点的各向异性晶格变形

Post-Annealing Effects on Emission Characteristics of InAs Quantum Dots on GaNAs Buffer Layer

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