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High-density Inas Quantum Dots On Ganas Buffer Layer

机译:Ganas缓冲层上的高密度Inas量子点

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Characteristics of InAs quantum dot density on a GaNAs buffer layer grown by metalorganic chemical vapor deposition were investigated using atomic force microscopy, focusing on the growth rate of the buffer layer as a significant growth parameter. High dot density of 1.7 × 10~(11) cm~(-2) was achieved by using the GaNAs buffer with the growth rate of 1.45 μm/h. It is found that surface roughness of the buffer layer is a key factor of increasing dot density. Suppression of coalescent dots that are one of the causes of emission intensity degradation was also quantitatively obtained. These results are effective for quantum dot lasers with high modal gain.
机译:利用原子力显微镜研究了通过金属有机化学气相沉积法生长的GaNAs缓冲层上InAs量子点密度的特征,重点是缓冲层的生长速率作为重要的生长参数。使用GaNAs缓冲液以1.45μm/ h的生长速率实现了1.7×10〜(11)cm〜(-2)的高点密度。发现缓冲层的表面粗糙度是增加点密度的关键因素。还定量地获得了作为发光强度降低的原因之一的聚结点的抑制。这些结果对于具有高模态增益的量子点激光器是有效的。

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