Excellent Passivation of p~+ Silicon Surfaces by Inline Plasma Enhanced Chemical Vapor Deposited SiO_x /AIO_x Stacks

摘要

Excellent surface passivation of boron emitters is demonstrated for industrial plasma-enhanced chemical vapor deposited (PECVD) SiO_x/AIO_x stacks. Emitter saturation current densities of 39 and 34 fA/cm~2, respectively, were achieved at 300 K on 80 Ω /sq boron emitters after activation by (ⅰ) a standard industrial firing process and (ⅱ) a forming gas anneal followed by industrial firing. We find that the surface passivation by SiO_x/ AIO_x stack can be effectively controlled by varying the SiO_x layer thickness. This stack is directly applicable to certain high-efficiency solar cell structures, by optimising the SiO_x thickness accordingly.