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Excellent Passivation of n ‐Type Silicon Surfaces Enabled by Pulsed‐Flow Plasma‐Enhanced Chemical Vapor Deposition of Phosphorus Oxide Capped by Aluminum Oxide

机译：通过氧化铝覆盖的磷脂含磷氧化物的脉冲流等离子体增强的化学气相沉积优异的硅表面钝化钝化硅表面

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Jimmy Melskens; Roel J. Theeuwes; Lachlan E. Black; Willem-Jan H. Berghuis; Bart Macco; Paula C. P. Bronsveld; W. M. M. Kessels;
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1. Effect of N_2O/SiH_4 flow ratios on properties of amorphous silicon oxide thin films deposited by inductively-coupled plasma chemical vapor deposition with application to silicon surface passivation [J] . Dao V.-A., Nguyen V.-D., Heo J., Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology . 2009,第3期

机译：N_2O / SiH_4流量比对电感耦合等离子体化学气相沉积法制备非晶硅氧化物薄膜的影响及其在硅表面钝化中的应用
2. High Quality Aluminum Oxide Passivation Layer for Crystalline Silicon Solar Cells Deposited by Parallel-Plate Plasma-Enhanced Chemical Vapor Deposition [J] . Shinsuke Miyajima, Junpei Irikawa, Akira Yamada, Applied physics express . 2010,第1期

机译：通过平行板等离子体增强化学气相沉积法沉积的用于结晶硅太阳能电池的高质量氧化铝钝化层
3. EFFECTIVE GaN SURFACE PASSIVATION BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION OF SILICON OXIDE [J] . A. CHAKROUN, A. JAOUAD, A. GIGUERE, International journal of nanoscience . 2012,第4期

机译：等离子体增强化学气相沉积氧化硅对GaN表面的钝化作用
4. HYDROGENATED ALUMINUM OXIDE FILMS DEPOSITED BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION FOR PASSIVATION OF P-TYPE CRYSTALLINE SILICON [C] . Shinsuke Miyajima, Junpei Irikawa, Akira Yamada, European Photovoltaic Solar Energy Conference . 2008

机译：通过等离子体增强的化学气相沉积沉积的氢化氧化铝膜，用于P型晶体硅的钝化
5. Remote plasma enhanced chemical vapor deposition of fluorinated silicon oxide films using 1,2bis(methyldifluorosilyl)ethane and triethoxyfluorosilane. [D] . Jin, Zhongping. 2005

机译：使用1,2-双（甲基二氟甲硅烷基）乙烷和三乙氧基氟硅烷，远程等离子体增强了氟化氧化硅膜的化学气相沉积。
6. Preparation of Aligned Ultra-long and Diameter-controlled Silicon Oxide Nanotubes by Plasma Enhanced Chemical Vapor Deposition Using Electrospun PVP Nanofiber Template [O] . Ming Zhou, Jinyuan Zhou, Ruishan Li, 2010

机译：使用电纺PVP纳米纤维模板的等离子体增强化学气相沉积法制备对准的超长和可控直径的氧化硅纳米管
7. Addendum to "Effective GaN Surface Passivation by Plasma Enhanced Chemical Vapor Deposition of Silicon Oxide" [O] . 2012

机译：“有效的GaN表面钝化等离子体增强硅氧化硅化学气相沉积”的附录

Excellent Passivation of n ‐Type Silicon Surfaces Enabled by Pulsed‐Flow Plasma‐Enhanced Chemical Vapor Deposition of Phosphorus Oxide Capped by Aluminum Oxide

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