机译:使用图案化外延剥离将GaAs和Ge的晶圆级层转移到Si晶圆上
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8562, Japan;
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8562, Japan;
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8562, Japan;
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8562, Japan;
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8562, Japan;
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8562, Japan;
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8562, Japan;
Sumitomo Chemical Co., Ltd., Tsukuba, Ibaraki 300-3294, Japan;
Sumitomo Chemical Co., Ltd., Tsukuba, Ibaraki 300-3294, Japan;
Sumitomo Chemical Co., Ltd., Tsukuba, Ibaraki 300-3294, Japan;
Sumitomo Chemical Co., Ltd., Tsukuba, Ibaraki 300-3294, Japan;
Sumitomo Chemical Co., Ltd., Tsukuba, Ibaraki 300-3294, Japan;
Hitachi Kokusai Electric Inc., Toyama 939-2393, Japan;
Hitachi Kokusai Electric Inc., Toyama 939-2393, Japan;
Hitachi Kokusai Electric Inc., Toyama 939-2393, Japan;
机译:使用牺牲ZnO夹层从GaN衬底上晶圆级外延剥离光电级GaN
机译:使用牺牲ZnO夹层从GaN衬底上晶圆级外延剥离光电级GaN
机译:使用外延层的转移印刷在硅上进行III-V族激光器的晶圆级集成
机译:晶圆级Si VLSI上GaAs LED的外延剥离阵列,用于光学互连技术
机译:在硅上大面积,晶片级外延生长锗以及集成高性能晶体管。
机译:晶圆级单晶钙钛矿图案化薄膜基于几何约束的横向晶体生长
机译:使用带隙选择性光素展示湿蚀刻(Phys Status Solidi B 8/2017)的晶圆级外延剥离GaN