首页> 外文会议> >Epitaxial lift-off arrays of GaAs LEDs over wafer-scale Si VLSI for optical interconnect technology

【24h】

Epitaxial lift-off arrays of GaAs LEDs over wafer-scale Si VLSI for optical interconnect technology

机译：晶圆级Si VLSI上GaAs LED的外延剥离阵列，用于光学互连技术

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

Summary form only given. In conclusion, we have developed a manufacturable and cost-effective epitaxial lift off (ELO) process to integrate a 2" GaAs wafer, containing LEDs, over 5" Si wafer with functioning dies.

机译：仅提供摘要表格。总而言之，我们已经开发了一种可制造且经济高效的外延剥离（ELO）工艺，用于将2“ GaAs晶片（包含LED）和超过5” Si晶片与有效管芯集成在一起。

著录项

来源
《》|1996年|p.167-168|共2页
会议地点
作者
Wei Chang; Yablonovitch; E.; Dines; E.L.; Pepe; A.A.; Ludwig; D.;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类无线电电子学、电信技术;
关键词
gallium arsenide; III-V semiconductors; light emitting diodes; optical fabrication; optical films; epitaxial growth; semiconductor growth; VLSI; optical interconnections; epitaxial lift-off arrays; GaAs LEDs; wafer-scale Si VLSI; optical interconnect technology; cost-effective epitaxial lift off; GaAs wafer; LEDs; Si wafer; functioning dies; 2 in; 5 in; GaAs; Si;

机译：砷化镓; III-V族半导体;发光二极管;光学制造;光学薄膜;外延生长;半导体生长; VLSI;光学互连;外延剥离阵列; GaAs LEDs;晶圆级Si VLSI;光学互连技术;成本有效外延剥离; GaAs晶片; LEDs; Si晶片;功能晶粒; 2 in; 5 in; GaAs; Si;

相似文献

外文文献
中文文献
专利

1. Wafer-scale layer transfer of GaAs and Ge onto Si wafers using patterned epitaxial lift-off [J] . Eiko Mieda, Tatsuro Maeda, Noriyuki Miyata, Japanese journal of applied physics . 2015,第3期

机译：使用图案化外延剥离将GaAs和Ge的晶圆级层转移到Si晶圆上
2. Monolithic integration of an InGaAs/GaAs/AlGaAs strained layer SQW LED and GaAs MESFET using epitaxial lift-off [J] . Polentier I., Buydens L. Electronics Letters . 1990,第13期

机译：利用外延剥离将InGaAs / GaAs / AlGaAs应变层SQW LED和GaAs MESFET进行单片集成
3. Epitaxial lift-off GaAs LEDs to Si for fabrication of opto-electronic integrated circuits [J] . Pollentier I., Demeester P. Electronics Letters . 1990,第3期

机译：外延剥离砷化镓发光二极管至硅，用于制造光电集成电路
4. Epitaxial lift-off arrays of gaas LEDs over wafer-scale si VLSI for optical interconnect technology [C] . Wei Chang, Yablonovitch, E. . 1996

机译：晶圆级si VLSI上的gaas LED的外延剥离阵列，用于光学互连技术
5. Alignment tolerance study between VCSEL arrays and a new kind of ordered fiber array technology considered for two-dimensional parallel optical interconnects. [D] . Mathieu, Frederick. 2000

机译：VCSEL阵列之间的对准公差研究和一种考虑用于二维平行光学互连的新型有序光纤阵列技术。
6. Structural and optical properties of position-retrievable low-density GaAs droplet epitaxial quantum dots for application to single photon sources with plasmonic optical coupling [O] . Eun-Hye Lee, Jin-Dong Song, Il-Ki Han, 2015

机译：位置可获取的低密度GaAs液滴外延量子点的结构和光学性质用于等离激元光学耦合的单光子源
7. Optical 8-channel, 10 Gb/s MT pluggable connector alignment technology for precision coupling of laser and photodiode arrays to polymer waveguide arrays for optical board-to-board interconnects [O] . Ioannis Papakonstantinou, David R. Selviah, Richard A. Pitwon, 2008

机译：光学8通道，10 GB / S MT可插拔连接器对准技术，用于激光和光电二极管阵列的精密耦合到光学板到板互连的聚合物波导阵列

Epitaxial lift-off arrays of GaAs LEDs over wafer-scale Si VLSI for optical interconnect technology

摘要

著录项

相似文献

相关主题

期刊订阅