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Wafer-scale epitaxial lift-off of GaN using bandgap-selective photoenhanced wet etching (Phys. Status Solidi B 8/2017)

机译：使用带隙选择性光素展示湿蚀刻（Phys Status Solidi B 8/2017）的晶圆级外延剥离GaN

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Chris Youtsey; Robert McCarthy; Rekha Reddy; Kamran Forghani; Andy Xie; Ed Beam; Jingshan Wang; Patrick Fay; Timothy Ciarkowski; Eric Carlson; Louis Guido;
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1. Wafer-scale epitaxial lift-off of GaN using bandgap-selective photoenhanced wet etching [J] . Youtsey Chris, McCarthy Robert, Reddy Rekha, Physica status solidi, B. Basic research . 2017,第8期

机译：使用带隙选择性光素展示湿蚀刻GaN的晶圆级外延剥离
2. Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer [J] . Rajan Akhil, Rogers David J., Cuong Ton-That, Journal of Physics, D. Applied Physics: A Europhysics Journal . 2016,第31期

机译：使用牺牲ZnO夹层从GaN衬底上晶圆级外延剥离光电级GaN
3. Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer [J] . Rajan Akhil, Rogers David J., Cuong Ton-That, Journal of Physics, D. Applied Physics: A Europhysics Journal . 2016,第31期

机译：使用牺牲ZnO夹层从GaN衬底上晶圆级外延剥离光电级GaN
4. Epitaxial Lift-Off from Native GaN Substrates Using Photoenhanced Wet Etching [C] . Chris Youtsey, Robert McCarthy, Rekha Reddy, International Conference on Compound Semiconductor Manufacturing Technology . 2017

机译：使用PhotoNhanced Wet Etching从天然GaN基板上外延升降
5. Optimization of Dry and Wet GaN Etching to Form High Aspect Ratio Nanowires [D] . Hartensveld, Matthew. 2018

机译：干湿GaN蚀刻优化形成高纵横比纳米线
6. Fabrication of High-Quality and Strain-Relaxed GeSn Microdisks by Integrating Selective Epitaxial Growth and Selective Wet Etching Methods [O] . Guangjian Zhu, Tao Liu, Zhenyang Zhong, 2020

机译：集成选择性外延生长和选择性湿法刻蚀制造高质量和应变松弛的GeSn微盘
7. Ion-Implant Isolated Vertical GaN p-n Diodes Fabricated with Epitaxial Lift-Off From GaN Substrates (Phys. Status Solidi A 4∕2019) [O] . Jingshan Wang, Robert McCarthy, Chris Youtsey, 2019

机译：离子植入物隔离垂直GaN P-N二极管，由GaN基板（Phys.Tudy Solidi A 4/2019）制成外延升降机

Wafer-scale epitaxial lift-off of GaN using bandgap-selective photoenhanced wet etching (Phys. Status Solidi B 8/2017)

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