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Ion-Implant Isolated Vertical GaN p-n Diodes Fabricated with Epitaxial Lift-Off From GaN Substrates (Phys. Status Solidi A 4∕2019)

机译：离子植入物隔离垂直GaN P-N二极管，由GaN基板（Phys.Tudy Solidi A 4/2019）制成外延升降机

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Jingshan Wang; Robert McCarthy; Chris Youtsey; Rekha Reddy; Jinqiao Xie; Edward Beam; Louis Guido; Lina Cao; Patrick Fay;
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1. Ion-Implant Isolated Vertical GaN p-n Diodes Fabricated with Epitaxial Lift-Off From GaN Substrates [J] . JingshanWang, RobertMcCarthy, ChrisYoutsey, Physica status solidi . 2019,第4期

机译：GaN衬底外延剥离制造的离子注入隔离垂直GaN p-n二极管
2. Ion-Implant Isolated Vertical GaN p-n Diodes Fabricated with Epitaxial Lift-Off From GaN Substrates [J] . JingshanWang, RobertMcCarthy, ChrisYoutsey, Physica status solidi . 2019,第4期

机译：离子植入物隔离垂直GaN P-N二极管，由GaN基材的外延剥离制成
3. Ion-Implant Isolated Vertical GaN p-n Diodes Fabricated with Epitaxial Lift-Off From GaN Substrates [J] . Jingshan Wang, Robert McCarthy, Chris Youtsey, Physica status solidi . 2018,第22期

机译：GaN衬底外延剥离制造的离子注入隔离垂直GaN p-n二极管
4. Demonstration of thin-film GaN Schottky diodes fabricated with epitaxial lift-off [C] . J. Wang, C. Youtsey, R. McCarthy, Annual Device Research Conference . 2016

机译：外延剥离制造的薄膜GaN肖特基二极管的演示
5. Defect-Mediated Carrier Transport Mechanisms in Vertical GaN p-n Diodes [D] . Robertson Bayless, Christian Andrew. 2019

机译：垂直GaN P-N二极管中的缺陷介导的载波传输机制
6. Electrically driven highly efficient three-dimensional GaN-based light emitting diodes fabricated by self-aligned twofold epitaxial lateral overgrowth [O] . Yang-Seok Yoo, Hyun Gyu Song, Min-Ho Jang, -1

机译：通过自对准双倍外延横向过生长制造的电驱动高效的基于GaN的三维GaN发光二极管
7. Wafer-scale epitaxial lift-off of GaN using bandgap-selective photoenhanced wet etching (Phys. Status Solidi B 8/2017) [O] . Chris Youtsey, Robert McCarthy, Rekha Reddy, 2017

机译：使用带隙选择性光素展示湿蚀刻（Phys Status Solidi B 8/2017）的晶圆级外延剥离GaN

Ion-Implant Isolated Vertical GaN p-n Diodes Fabricated with Epitaxial Lift-Off From GaN Substrates (Phys. Status Solidi A 4∕2019)

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