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A 0.6V 44.6 ppm/℃ subthreshold CMOS voltage reference with wide temperature range and inherent leakage compensation

机译:具有宽温度范围和固有泄漏补偿的0.6V 44.6 ppm /℃亚阈值CMOS电压基准

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摘要

In this paper, a 0.6 V subthsheshold CMOS voltage reference (CVR) achieving wide temperature range and high power supply ripple rejection (PSRR) is presented. The proposed CVR structure can compensate the high temperature leakage and current mirror induced mismatches so as to increase the operating temperature range. The generated reference voltage of the proposed CVR circuit is the threshold voltage difference of two NMOS transistors, leading to relatively small variations. Moreover, the enhanced current source helps achieve high PSRR. The proposed CVR circuit is implemented in a standard 0.18-mu m CMOS technology. Measurement results show that, with one single trimming, a mean output of 344 mV with standard deviation of only 2.89 mV and average TC of 44.6 ppm/degrees C over a wide temperature range from -40 degrees C to 125 degrees C is achieved. The measured PSRR is -68 dB, -52 dB and -52 dB at 10 Hz, 100 kHz and 10 MHz, respectively. The measured line sensitivity (LS) is 0.06%/V with a power supply from 0.6 V to 2 V while consuming 19.8 nW at 0.6 V supply. The active area is 0.019 mm(2).
机译:本文提出了一个0.6 V亚阈值CMOS参考电压(CVR),该参考电压可实现宽温度范围和高电源纹波抑制比(PSRR)。所提出的CVR结构可以补偿高温泄漏和电流镜引起的失配,从而增加了工作温度范围。所提出的CVR电路的生成参考电压是两个NMOS晶体管的阈值电压差,导致相对较小的变化。此外,增强的电流源有助于实现高PSRR。拟议的CVR电路采用标准的0.18微米CMOS技术实现。测量结果表明,通过一次修整,在-40摄氏度至125摄氏度的宽温度范围内,平均输出为344 mV,标准偏差仅为2.89 mV,平均TC为44.6 ppm /℃。在10 Hz,100 kHz和10 MHz时测得的PSRR分别为-68 dB,-52 dB和-52 dB。在0.6 V至2 V的电源下,测得的线路灵敏度(LS)为0.06%/ V,而在0.6 V的电源下消耗的功率为19.8 nW。活动区域为0.019 mm(2)。

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