A 4.2 nW and 18 ppm/°C Temperature Coefficient Leakage-Based Square Root Compensation (LSRC) CMOS Voltage Reference

摘要

State-of-the-art CMOS-based voltage reference suffer from a trade-off between power dissipation and temperature coefficient (TC) due to the limited order of compensation in an advanced process which features a low supplied voltage (1 similar to 1.2 V). The proposed voltage reference with leakage-based square root compensation (LSRC) technique bias the substrate to offset TC with ultra-low leakage current (100 similar to 300 pA). On the other hand, the architecture provides an extensible order of compensation which is independent of voltage headroom. The two LSRC branches voltage reference implemented in 40 nm CMOS process achieves a within-wafer sigma/mu of 0.204 and a TC of 18 ppm/degrees C with a power consumption of 4.2 nW.