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Low voltage high-output-driving CMOS voltage reference with temperature compensation

机译:具有温度补偿的低压高输出驱动CMOS电压基准

摘要

A bandgap reference voltage generator has a first stage that generates a first current that is complementary-to-absolute-temperature (Ictat) and a second stage that generates a current that is proportional-to-absolute-temperature (Iptat). The Ictat and Iptat currents are both forced through a summing resistor to generate a voltage that is relatively independent of temperature, since the Ictat and Iptat currents cancel out each other's temperature dependencies. A PMOS output transistor drives current to an output load to maintain the load at the reference voltage. An op amp drives the gate of the PMOS output transistor and has inputs connected to emitters of PNP transistors in the second stage. A series of resistors generate the reference voltage between the PMOS output transistor and ground and drives bases of the PNP transistors and includes the summing resistor. Parasitic PNP transistors in an all-CMOS process are used. The generator operates with a 1-volt power supply.
机译:带隙基准电压发生器具有产生与绝对温度(Ictat)互补的第一电流的第一级和产生与绝对温度(Iptat)成比例的电流的第二级。由于Ictat和Iptat电流抵消了彼此的温度依赖性,因此Ictat和Iptat电流都被强制通过求和电阻以生成相对独立于温度的电压。 PMOS输出晶体管将电流驱动到输出负载,以将负载维持在参考电压。运算放大器驱动PMOS输出晶体管的栅极,并在第二级的输入连接到PNP晶体管的发射极。一系列电阻在PMOS输出晶体管和地之间产生参考电压,并驱动PNP晶体管的基极,并包括求和电阻。使用全CMOS工艺的寄生PNP晶体管。发电机使用1伏电源供电。

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