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New Curvature-Compensated CMOS Bandgap Voltage Reference

     

摘要

A novel curvaturecompensated CMOS bandgap voltage reference is presented. The reference utilizes two first order temperature compensations generated from the nonlinearity of the finite current gain β of vertical pnp bipolar transistor. The proposed circuit,designed in a standard 0.18 μm CMOS process, achieves a good temperature coefficient of 2.44 ppm/℃ with temperature range from 40 ℃ to 85 ℃, and about 4 mV supply voltage variation in the range from 1.4 V to 2.4 V. With a 1.8 V supply voltage, the power supply rejection ratio is 56 dB at 10 MHz.

著录项

  • 来源
    《电子科技学刊》|2007年第4期|370-373|共4页
  • 作者单位

    School of Microelectronics & Solid-State Electronics, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, China;

    School of Microelectronics & Solid-State Electronics, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, China;

    School of Microelectronics & Solid-State Electronics, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, China;

    School of Microelectronics & Solid-State Electronics, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, China;

    School of Microelectronics & Solid-State Electronics, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, China;

  • 原文格式 PDF
  • 正文语种 chi
  • 中图分类 真空电子技术;
  • 关键词

    Bandgap voltage reference, CMOS,curvature-compensation technique, finite current gain.;

  • 入库时间 2023-07-26 00:13:12
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