Criterion for SEU Occurrence in SRAM Deduced From Circuit and Device Simulations in Case of Neutron-Induced SER

摘要

A reliable criterion for SEU occurrence simulation is presented. It expresses the relationship existing at threshold between the magnitude and duration of the ion-induced parasitic pulse. This criterion can be obtained by both three-dimensional device and SPICE simulations. Using this criterion, the simulated and experimental SER on 130 and 250 nm technologies are shown to be in good agreement.