NBTI and Irradiation Effects in P-Channel Power VDMOS Transistors

摘要

In this paper, we report the results of consecutive irradiation and negative bias temperature (NBT) stress experiments performed on p-channel power vertical double-diffused metal–oxide semiconductor transistors. The purpose is to examine the effects of a specific kind of stress in devices previously subjected to the other kind of stress, as well as to assess if possible the behavior of devices subjected to simultaneous irradiation and NBT stressing. It is shown that irradiation of previously NBT stressed devices leads to a further increase of negative threshold voltage shift due to additional build-up of both oxide trapped charge and interface traps. NBT stress effects in previously irradiated devices may, however, depend on gate bias applied during irradiation and on the total dose received: in the cases of low-dose irradiation or irradiation without gate bias, the subsequent NBT stress seems to lead to further device degradation, whereas in the cases of devices previously irradiated to high doses or with gate bias applied during irradiation, NBT stress seems to have a positive role since it practically anneals a part of radiation-induced degradation.