Analysis of gate-bias-induced heating effects in deep-submicron ESD protection designs

摘要

This paper presents a detailed investigation of the degradation of electrostatic discharge (ESD) strength with high gate bias for deep-submicron salicided ESD protection nMOS transistors, which has significant implications for protection designs where high gate coupling occurs under ESD stress. It has been shown that gate-bias-induced heating is the primary cause of early ESD failure and that this impact of gate bias depends on the finger width of the protection devices. In addition, it has been established that substrate biasing can effectively alleviate the adverse impact of the gate bias and can improve ESD strength despite the gate-coupling level. Improved understanding of ESD behavior for advanced devices under high gate-coupling conditions can extend design capabilities of protection structures.