Design of SCR-Based ESD Protection Device for Power Clamp Using Deep-Submicron CMOS Technology

摘要

The novel SCR-based (silicon controlled rectifier) device for ESD power clamp is presented in this paper. The proposed device has a high holding voltage and a high triggering current characteristic. These characteristics enable latch-up immune normal operation as well as superior full chip ESD protection. The device has a small area in requirement robustness in comparison to ggNMOS (gate grounded NMOS). The proposed ESD protection device is designed in 0.25 μm and 0.5 μm CMOS Technology. In the experimental result, the proposed ESD clamp has a double trigger characteristic, a high holding voltage of 4 V and a high trigger current of above 350 mA. The robustness has measured to HBM 8 kV (HBM: Human Body Model) and MM 400 V (MM: Machine Model). The proposed device has a high level It2 of 52 mA/μm approximately.