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Propensity of Copper Dendrite Growth on Subassembly Package Components Used in Quad Flat Package

机译:四方扁平封装中使用的子封装组件上铜枝晶生长的倾向

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Cu dendrite growth of quad flat package linked to epoxy molding compound (EMC), leadframe, and leadframe adhesive tape is comprehensively investigated. Cu dendrite grows particularly in the lead pitch smaller than $leq!hbox{130} muhbox{m}$ covering with a leadframe tape, and in turn, it results in a resistive short. Such an appearance is attributed to test procedure of the precondition ( $hbox{30} ^{circ}hbox{C}/hbox{60}%$ relative humidity with 260-$^{circ}hbox{C}$ reflow) followed by biased stress test $(hbox{125} ^{circ}hbox{C} / hbox{1.95} hbox{V})$, which not only allows moisture condensation in the tape and but also provides bias between the leads. The influences of impurity in EMC and adhesive tape on dendrite formation are quantified with SEM–EDX, Auger electron spectrometry (AES), inductively coupled plasma–mass spectrometry (ICP–MS), and ICP–AES. As a result, the usage of nonhalide EMC can provide more reliable margin than that of larger lead spacing against Cu dendrite growth.
机译:全面研究了与环氧树脂模塑料(EMC),引线框架和引线框架胶带连接的四方扁平封装的Cu枝晶生长。铜枝晶特别是在小于用引线框胶带覆盖的$ leq!hbox {130} muhbox {m} $的引线节距中生长,从而导致电阻性短路。这样的外观归因于先决条件的测试程序($ hbox {30} ^ {circ} hbox {C} / hbox {60}%$相对湿度,再回流260-$ ^ {circ} hbox {C} $)通过偏压力测试$(hbox {125} ^ {circ} hbox {C} / hbox {1.95} hbox {V})$,不仅可以使胶带中的水分凝结,还可以在引线之间提供偏压。通过SEM-EDX,俄歇电子能谱(AES),电感耦合等离子体-质谱(ICP-MS)和ICP-AES量化了EMC和胶带中杂质对枝晶形成的影响。结果,与针对铜枝晶生长的较大引线间距相比,使用非卤化物EMC可以提供更高的可靠性。

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