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Solvent Effect on the Electrical Properties of Triisopropylsilylethynyl (TIPS) Pentacene Organic Thin-Film Transistors

机译:溶剂对三异丙基硅基乙炔基(TIPS)并五苯有机薄膜晶体管电性能的影响

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We investigated the electrical properties of triisopropylsilylethynyl (TIPS) pentacene organic thin-film transistor (OTFT) depending on solvent type. TIPS pentacene was spin coated by using chlorobenzene, p-xylene, chloroform, and toluene as solvents. A broad spectrum of electrical properties was affected by the solvent choice. Fabricated OTFT with chlorobenzene shows field-effect mobility of $hbox{1.0} times hbox{10}^{-2} hbox{cm}^{2}/hbox{V}cdot hbox{s}$, on/off ratio of $hbox{4.3} times hbox{10}^{3}$, and threshold voltage of 5.5 V. In contrast, with chloroform, the mobility is $hbox{5.8} times hbox{10}^{-7} hbox{cm}^{2}/hbox{V} cdot hbox{s}$, on/off ratio of $hbox{1.1} times hbox{10}^{2}$, and threshold voltage of 1.7 V. Further investigation by measurement of the grain size of TIPS thin films by atomic force microscopy (AFM) and X-ray diffraction spectroscopy showed that solvents with higher boiling points resulted in larger grain sizes and improved crystallinity. The higher performance electrical characteristics are explained by large grain size and high crystallinity of the TIPS pentacene layer in films spin coated with higher boiling point such as chlorobenzene.
机译:我们研究了三异丙基甲硅烷基乙炔基(TIPS)并五苯有机薄膜晶体管(OTFT)的电性能,具体取决于溶剂类型。通过使用氯苯,对二甲苯,氯仿和甲苯作为溶剂旋涂TIPS并五苯。广泛的电性能受到溶剂选择的影响。用氯苯制备的OTFT的场效应迁移率是$ hbox {1.0}乘以hbox {10} ^ {-2} hbox {cm} ^ {2} / hbox {V} cdot hbox {s} $,开/关比为$ hbox {4.3}乘以hbox {10} ^ {3} $,阈值电压为5.5V。相比之下,氯仿的迁移率是$ hbox {5.8}乘以hbox {10} ^ {-7} hbox {cm } ^ {2} / hbox {V} cdot hbox {s} $,开/关比$ hbox {1.1}乘以hbox {10} ^ {2} $,阈值电压为1.7V。通过原子力显微镜(AFM)和X射线衍射光谱法对TIPS薄膜的晶粒尺寸进行了分析,结果表明,沸点较高的溶剂可导致较大的晶粒尺寸和改善的结晶度。较高电性能的原因是,在旋涂有较高沸点的薄膜(例如氯苯)中的TIPS并五苯层具有较大的晶粒尺寸和较高的结晶度。

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