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Solvent-dependent electrical characteristics and stability of organic thin-film transistors with drop cast bis(triisopropylsilylethynyl) pentacene

机译:滴铸双(三异丙基甲硅烷基乙炔基)并五苯的有机薄膜晶体管的溶剂依赖性电特性和稳定性

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The solvent from which the active layer is drop cast dramatically influences the electrical characteristics and electrical stability of thin-film transistors comprising bis(triisopropylsilylethynyl) pentacene. Casting from high boiling solvents allows slower crystallization; devices cast from toluene and chlorobenzene thus exhibit mobilities > 0.1 cm~2/V s and on/off ratios of ~10~6. More importantly, the solvent choice influences the device stability. Devices from toluene exhibit stable characteristics, whereas devices from chlorobenzene show hystereses on cycling, with dramatic threshold voltage shifts toward positive voltages. The instability in chlorobenzene devices is attributed to the migration of water and solvent impurities to the charge transport interface on repetitive testing.
机译:从中滴下活性层的溶剂极大地影响了包含双(三异丙基甲硅烷基乙炔基)并五苯的薄膜晶体管的电特性和电稳定性。用高沸点溶剂浇铸可降低结晶速度;因此,由甲苯和氯苯铸造的装置的迁移率> 0.1 cm〜2 / V s,开/关比约为10〜6。更重要的是,溶剂的选择会影响器件的稳定性。用甲苯制成的器件表现出稳定的特性,而用氯苯制成的器件在循环时表现出迟滞现象,其阈值电压急剧向正电压偏移。氯苯装置的不稳定性归因于重复测试中水和溶剂杂质向电荷传输界面的迁移。

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