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On the Way to Zero Defect of Plastic-Encapsulated Electronic Power Devices—Part III: Chip Coating, Passivation, and Design

机译:塑胶封装电子功率器件零缺陷之路-第三部分:芯片涂层,钝化和设计

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摘要

Concerning thermomechanically induced failures such as metal-line deformation and passivation cracks, there is a practicable way to achieve the zero-defect limit of plastic-encapsulated power devices. This limit can be reached by, first, evaluating the influence of the major components involved and, consequently, by selecting the appropriate materials and measures, and, second, by always keping in mind the interdependence between all components, i.e., chip and package have to be regarded as an entity. An important finding was that applying simply one improvement step will not necessarily lead to the desired goal. Only the implementation of all improvement steps considering their interdependence is the key for the perfect overall system chip and package. In Part III of this series of papers, the influence of passivation and die coating materials on thermomechanical damage is investigated. Finally, it is shown that an intelligent chip design, in combination with a stiff Al multilayer, a low-stress molding compound (low coefficient of thermal expansion and high Young's modulus), a new passivation material, and an appropriate polyimide layer, may reduce the thermomechanical damage to zero, even for electronic power devices.
机译:关于热机械引起的故障,例如金属线变形和钝化裂纹,有一种可行的方法来实现塑料封装功率器件的零缺陷极限。可以通过首先评估所涉及的主要组件的影响,然后选择适当的材料和措施来达到此限制,其次,要始终牢记所有组件之间的相互依赖性,即芯片和封装具有被视为实体。一个重要发现是,仅应用一个改进步骤并不一定会达到预期的目标。只有考虑到它们的相互依赖性,所有改进步骤的实施才是完美的整体系统芯片和封装的关键。在该系列论文的第三部分中,研究了钝化和模具涂覆材料对热机械损伤的影响。最后,研究表明,将智能芯片设计与刚性的Al多层膜,低应力的模塑料(低的热膨胀系数和高的杨氏模量),新型的钝化材料以及合适的聚酰亚胺层相结合,可以减少即使对于电子功率设备,热机械损坏也为零。

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