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Technology Scaling Effect on the Relative Impact of NBTI and Process Variation on the Reliability of Digital Circuits

机译:技术规模效应对NBTI的相对影响以及工艺变化对数字电路可靠性的影响

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摘要

The impact of negative bias temperature instability (NBTI) on circuit reliability is typically assessed without accounting for the variability associated with the manufacturing process. With technology progression, manufacturing process variability scales more aggressively than transistor NBTI lifetime. Hence, a clear link between transistor and circuit reliability that takes variability into account is imperative to analyze circuit reliability. We propose a figure of merit termed fall-out to describe the proportion of circuits whose frequencies would exceed the initial manufacturing distribution. We use fall-out to assess NBTI and process variability in tandem, and we show that the fall-out of circuit frequency (or timing delay) peaks and diminishes as technology scales. We propose that the fall-out of a ring oscillator can be used as a worst-case indicator of circuit reliability in any given technology.
机译:通常在不考虑与制造过程相关的可变性的情况下评估负偏置温度不稳定性(NBTI)对电路可靠性的影响。随着技术的进步,制造工艺的可变性要比晶体管NBTI的寿命更积极地扩展。因此,必须在晶体管和电路可靠性之间建立明确的联系,并考虑可变性,以分析电路的可靠性。我们提出了一个品质因数图,用以描述频率超过初始制造分布的电路所占的比例。我们使用辐射效应来串联评估NBTI和工艺变异性,并且表明随着技术规模的提高,电路频率(或时序延迟)的辐射效应将达到峰值并减小。我们建议在任何给定技术中,环形振荡器的故障都可以用作电路可靠性的最坏情况指标。

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