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首页> 外文期刊>Journal of circuits, systems and computers >Joint Effects of Aging and Process Variations on Soft Error Rate of Nano-Scale Digital Circuits
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Joint Effects of Aging and Process Variations on Soft Error Rate of Nano-Scale Digital Circuits

机译:老化和过程变化对纳米级数字电路软错误率的联合影响

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Soft errors have always been a concern in the design of digital circuits. As technology down-scales toward Nanometer sizes, emergence of aging effects, process variations, and Multiple Event Transients (METs) has made the soft error rate (SER) estimation of digital circuits very challenging. This paper intends to characterize the challenges by investigating the cross effects of theses issues in overall SER of a circuit. To this regard, we employ a simulation-based SER estimation approach in which the aging effect, process variations and METs are jointly considered in our fault injection process. In our simulation-based SER estimation approach, a statistical gate delay model is used. The fault injection results into ISCAS85 circuit benchmark reveal that the SER estimation without taking into account the aging effects, the process variations, and METs is significantly inaccurate.
机译:软误差始终是数字电路设计的担忧。作为纳米尺寸的技术下降,老化效果的出现,过程变化和多个事件瞬变(METS)使得数字电路的软错误率(SER)估计非常具有挑战性。本文旨在通过调查电路整体SER中问题的跨效果来表征挑战。为此,我们采用基于模拟的SER估计方法,其中在我们的故障注入过程中共同考虑了老化效果,过程变化和满足。在基于仿真的SER估计方法中,使用统计栅极延迟模型。故障注射结果进入ISCAS85电路基准,揭示SER估计而不考虑老化效果,过程变化和MET是显着不准确的。

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