Nitrided $hbox{La}_{2}hbox{O}_{3}$ as Charge-Trapping Layer for Nonvolatile Memory Applications

摘要

Charge-trapping characteristics of $hbox{La}_{2}hbox{O}_{3}$ with and without nitrogen incorporation were investigated based on $ hbox{Al/Al}_{2}hbox{O}_{3}hbox{/La}_{2}hbox{O}_{3}hbox{/SiO}_{2}hbox{/Si}$ (MONOS) capacitors. The physical properties of the high-$k$ films were analyzed by X-ray diffraction and X-ray photoelectron spectroscopy. Compared with the MONOS capacitor with $hbox{La}_{2}hbox{O}_{3}$ as charge-trapping layer, the one with nitrided $hbox{La}_{2}hbox{O}_{3}$ showed a larger memory window (4.9 V at $pm$10-V sweeping voltage), higher program speed (4.9 V at 1-ms $+$14 V), and smaller charge loss (27% after 10 years), due to the nitrided $hbox{La}_{2}hbox{O}_{3}$ film exhibiting less crystallized structure and high trap density induced by nitrogen incorporation, and suppressed leakage by nitrogen passivation.