Low-Leakage Bidirectional SCR With Symmetrical Trigger Circuit for ESD Protection in 40-nm CMOS Process

摘要

This paper presents a novel bidirectional electrostatic discharge protection device based on a dual silicon-controlled rectifier with a symmetrical trigger circuit. The proposed device has been realized and verified in a 40-nm CMOS process, which can pass a 3.75-kV HBM and a 250-V MM with a very low standby leakage current of ∼27 nA at 25 °C and a bias voltage of 0.9 V with a silicon footprint of only 13 μm×100 μm.