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Efficient timing analysis for CMOS circuits considering data dependent delays

机译:考虑数据相关延迟的CMOS电路的高效时序分析

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Both long- and short-path delays are used to determine the valid clocking for various complementary metal-organic-semiconductor (CMOS) circuits such as single phase latching, asynchronous, and wave pipelining. Therefore, accurate estimation of both long and short path delays is very crucial in the designing and testing of high speed CMOS circuits. Most of the previous approaches in detecting long and short sensitizable paths assume that the rising and falling of gate delays are either fixed or bounded. In fact the gate delay of CMOS circuits may also depend on how many and which inputs are rising or falling and the arrival times of those rising or falling inputs. For instance, the delay for a two-input CMOS NAND gate may vary as much as a factor of two based on whether one input or two inputs are changing. We shall refer a gate delay model which considers these factors as data dependent delay model. Gray et al. (1992) have proposed an approach based on simulation with event pruning to deal with this type of delay model. In this paper, we propose several algorithms to compute the longest and shortest sensitizable path delays based on a data dependent delay model. A proposed algorithm which is based on a combination of modified static (topological) timing analysis and path sensitization techniques seems to offer the best performance. The results obtained have shown to be more accurate than the traditional path sensitization approach based on bounded delay model.
机译:长路径延迟和短路径延迟均用于确定各种互补金属有机半导体(CMOS)电路的有效时钟,例如单相锁存,异步和流水线。因此,在高速CMOS电路的设计和测试中,长路径延迟和短路径延迟两者的准确估计至关重要。在检测长和短的敏感路径时,大多数以前的方法都假定门延迟的上升和下降是固定的或有界的。实际上,CMOS电路的栅极延迟还可能取决于有多少个输入以及哪个输入正在上升或下降以及那些上升或下降输入的到达时间。例如,基于一个输入还是两个输入正在变化,两输入CMOS与非门的延迟可能会变化两倍。我们将把考虑这些因素的门延迟模型称为与数据相关的延迟模型。格雷等。 (1992)提出了一种基于事件修剪的仿真方法来处理这种延迟模型。在本文中,我们提出了几种基于数据相关的延迟模型来计算最长和最短敏感路径延迟的算法。一种基于改进的静态(拓扑)时序分析和路径敏感技术的组合的拟议算法似乎提供了最佳性能。结果表明,与基于有限时延模型的传统路径敏感方法相比,该方法更为准确。

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