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Characterization and design of GaAs SCFL latched comparators based on improved linearized models

机译:基于改进的线性化模型的GaAs SCFL锁存比较器的表征和设计

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This brief presents characterization and design considerations of high-speed and high-precision GaAs latched comparators consisting of source coupled FET logic (SCFL) flip flops. In order to characterize the comparators, linearized equivalent circuit models are improved for the SCFL flip flops. Based on the models, critical design parameters such as recovery time, regeneration time and input voltage sensitivity are determined for the comparators. Circuit configurations for increasing circuit speed and accuracy are characterized and compared. One comparator is optimized and implemented in a 0.5 /spl mu/m GaAs E/D HEMT technology. Measurement results demonstrate the implemented comparator achieves an average voltage sensitivity of 11.5 mV at low frequencies and an optimal voltage sensitivity of 10.0 mV at an input signal frequency of 2 GHz and a clock frequency of 4 GHz. Predicted voltage sensitivities are also verified to be in good agreement with the measured results.
机译:本简介介绍了由源极耦合FET逻辑(SCFL)触发器组成的高速,高精度GaAs锁存比较器的特性和设计考虑。为了表征比较器,针对SCFL触发器改进了线性等效电路模型。根据这些模型,可以确定比较器的关键设计参数,例如恢复时间,再生时间和输入电压灵敏度。表征并比较了用于提高电路速度和精度的电路配置。一个比较器经过优化,并以0.5 / spl mu / m的GaAs E / D HEMT技术实现。测量结果表明,所实现的比较器在低频下的平均电压灵敏度为11.5 mV,在2 GHz的输入信号频率和4 GHz的时钟频率下的最佳电压灵敏度为10.0 mV。还验证了预测的电压灵敏度与测量结果完全一致。

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