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Characterization and modeling of a GaAs HFET toward design of linear 2.4 GHz high power amplifier

机译：GaAs HFET的表征和建模，以设计线性2.4 GHz大功率放大器

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A large signal HFET model based on the Curtice-Cubic model is constructed. Power GaAs HFET transistor SHF0186K is adopted for extraction. The DC and S-parameters characteristics of the transistor are used to derive the model. The simulation and measurement result of I-V and Y-parameter characteristics are compared.

机译：建立了基于Curtice-Cubic模型的大信号HFET模型。采用功率GaAs HFET晶体管SHF0186K进行提取。晶体管的DC和S参数特性用于导出模型。比较了I-V和Y参数特性的仿真和测量结果。

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《》|2000年|P.1056-1059|共4页
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Khusaidi; A.; Riyadi; M.A.;
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中图分类无线电电子学、电信技术 ;
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Characterization and modeling of a GaAs HFET toward design of linear 2.4 GHz high power amplifier

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