Disclosed are a 4.0-5.0 GHz 8W GaN monolithic power amplifier and a design method thereof. The amplifier comprises an input matching network, an interstage matching network, an output matching network, and a set of pHEMT transistors. The input matching network is connected to the interstage matching network by means of one pHEMT transistor. The interstage matching network is connected to the output matching network by means of four pHEMT transistors. A gate bias power supply is respectively connected to the input matching network and the interstage matching network. An interstage gate matching bias power supply is respectively connected to the interstage matching network and the output matching network. The invention addresses the difficulties of designing a modular circuit, is much smaller than a conventional hybrid integrated circuit, determines an optimal load impedance and an optimal source impedance of a chip, provides a circuit diagram associated with the input, output and interstage matching networks, optimizes parameters, including a stability coefficient, an input and output standing wave system, a gain, a power, efficiency and harmonic suppression, and provides a layout for a monolithic microwave power amplifier.
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